期刊

Advanced Materials

标题

Organic Thin-Film Transistors: UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

作者

Wei Huang, Xinming Zhuang, Ferdinand S. Melkonyan, Binghao Wang, Li Zeng, Gang Wang, Shijiao Han, Michael J. Bedzyk, Junsheng Yu, Tobin J. Marks, Antonio Facchetti

摘要

Ultra-sensitive OTFT-based NO2 gas sensors implementing a simple, low-cost UV/ozone (UVO) activation of the TFT gate dielectric layer are fabricated, as discussed in article number 1701706 by Junsheng Yu, Tobin J. Marks, Antonio Facchetti and co-workers. UVO generates oxygen-containing functional groups which strongly bind the NO2 molecules, which contributes to limit of detection of ≈400 ppb, and sensitivity approaches ≈200% and ≈160 000% for NO2 concentrations of 1 ppm and 30 ppm, respectively.

原文链接

http://onlinelibrary.wiley.com/doi/10.1002/adma.201770226/full