期刊
Advanced Materials

标题
Growth and Etching Kinetics: Growth and Etching of Monolayer Hexagonal Boron Nitride (Advcinct Molecular Orientations (Adv. Mater. 34/2015) (page 4949)

作者
Lifeng Wang, Bin Wu, Lili Jiang, Jisi Chen, Yongtao Li, Wei Guo, Pingan Hu and Yunqi Liu

摘要

The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

原文链接
http://onlinelibrary.wiley.com/doi/10.1002/adma.201501166/full