期刊
Advanced Materials
标题
Nanowires: Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells (Adv. Mater. 8/2013)
作者
Liang Li,Hao Lu,Zongyin Yang,Limin Tong,Yoshio Bando,Dmitri Golberg
摘要
Bandgap-graded CdSxSe1−xnanowires are utilized by Liang Li and co-workers on page 1109 for high-performance field-effect transistors and Schottky solar cells. The photovoltaic mechanism is ascribed to the Schottky junction effect and the “type II” band structure which maximizes the driving force for the injection of photoexcited electrons into the CdS through CdSxSe1-x from the CdSe by creating an optimized band alignment.
原文链接
