Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2

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标题

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2 


作者

Chunsen Liu, Xiao Yan, Jianlu Wang, Shijin Ding, Peng Zhou and David Wei Zhang


摘要

In article number 1604128, by Jianlu Wang, Peng Zhou, and David Wei Zhang, and co-workers, by combining two-dimensional material WSe2 and a three-dimensional Al2O3/HfO2/Al2O3 charge-trap stack, a charge-trap memory without a fatal overerase issue is achieved. State of the art values for flash memory based on two-dimensional materials are reported. The write time is significantly enhanced to 1 μs while the memory only captures electrons with a large electron memory window over 20 V and trap selectivity of about 13


原文链接

http://onlinelibrary.wiley.com/doi/10.1002/smll.v13.17/issuetoc

2017年05月09日

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