Perovskite p–n Junctions: Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping

产品简述

期刊

Advanced Materials


标题

Perovskite p–n Junctions: Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping


作者

Qingdong Ou, Yupeng Zhang, Ziyu Wang, Jodie A. Yuwono, Rongbin Wang, Zhigao Dai, Wei Li, Changxi Zheng, Zai‐Quan Xu, Xiang Qi, Steffen Duhm, Nikhil V. Medhekar, Han Zhang, Qiaoliang Bao


摘要

In article number 1705792, Yupeng Zhang, Han Zhang, Qiaoliang Bao, and co‐workers report spatially controlled doping of individual organic–inorganic hybrid perovskite nanosheets through surface transfer doping. The resulting lateral p–n junctions exhibit unprecedentedly strong carrier‐depletion characteristics with an ultrabroad depletion region up to 10 μm, which leads to highly efficient photodiodes with zero power consumption.


原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201870102


2018年05月09日

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