2D Materials: Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity

产品简述

期刊

Advanced Materials


标题

2D Materials: Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity


作者

Xinsheng Wang, Haining Liu, Juanxia Wu, Junhao Lin, Wen He, Hui Wang, Xinghua Shi, Kazutomo Suenaga, Liming Xie


摘要

Chemical synthesis of two‐dimensional charge‐density‐wave (CDW) materials on insulating substrates is important. In article number 1800074, Liming Xie and co‐workers develop a chemical vapor deposition (CVD) strategy to synthesize 1T‐TaS2 monolayers and few‐layers on hexagonal boron nitride (h‐BN). Robust CDW transitions are observed down to the monolayer extreme and highly responsive room‐temperature bolometers are fabricated and demonstrated.


原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201870289 


2018年09月21日

添加时间:

Graphene Sheets: Strong, Conductive, Foldable Graphene Sheets by Sequential Ionic and π Bridging

上一个:

下一个:

Graphene: Synthetic Multifunctional Graphene Composites with Reshaping and Self‐Healing Features via a Facile Biomineralization‐Inspired Process
  • 1