Photodetectors: High Detectivity from a Lateral Graphene–MoS2 Schottky Photodetector Grown by Chemical Vapor Deposition

产品简述

期刊

Advanced Electronic Materials


标题

Photodetectors: High Detectivity from a Lateral Graphene–MoS2 Schottky Photodetector Grown by Chemical Vapor Deposition 


作者

Wenjie Deng, Yongfeng Chen, Congya You, Beiyun Liu, Yanhan Yang, Gaoliang Shen, Songyu Li, Ling Sun, Yongzhe Zhang, Hui Yan


摘要

High performance of 2D material‐based photodetectors is important for their application. An ultrasensitive lateral graphene–MoS2 heterostructure Schottky photodetector is described by Yongzhe Zhang and co‐workers in article number 1800069. Moreover, a heterostructure photodetector array is demonstrated, showing the large‐scale fabrication capacity. The results prove the potential of 2D materials for future optoelectronics applications.


原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201870042 


2018年10月10日

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