Field‐Effect Transistors: Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

产品简述

期刊

Advanced Functional Materials


标题

Field‐Effect Transistors: Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic


作者

Mianzeng Zhong, Qinglin Xia, Longfei Pan, Yuqing Liu, Yabin Chen, Hui‐Xiong Deng, Jingbo Li, Zhongming Wei


摘要

In article 1802581, Zhongming Wei and co‐workers describe the layered crystal structure for a new 2D elemental semiconductor consisting of black arsenic (b‐As). The image also shows the Chinese character of the “As” element. The reported b‐As is more stable under ambient conditions than black phosphorous and could be obtained from natural mineral.


原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201870312 


2018年10月26日

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