Semiconductors: Growth of Large-Area 2D MoS2(1-x)Se2x Semiconductor Alloys (Adv. Mater. 17/2014)

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期刊

Advanced Materials


标题

Semiconductors: Growth of Large-Area 2D MoS2(1-x)Se2x Semiconductor Alloys (Adv. Mater. 17/2014)


作者

Qingliang Feng,Yiming Zhu,Jinhua Hong,Mei Zhang,Wenjie Duan,Nannan Mao,Juanxia Wu,Hua Xu,Fengliang Dong,Fang Lin,Chuanhong Jin,Chunming Wang,Jin Zhang,Liming Xie


摘要

Alloying in monolayers enables bandgap tuning in twodimensions. On page 2648, L. Xie, J. Zhang, and co-workers demonstrate that by direct evaporation of two end materials (MoS2 and MoSe2) and deposition at low temperatures, large-area 2D MoS2(1−x)Se2x monolayers are obtained. By changing the S/Se composition, the bandgap of MoS2(1−x)Se2x monolayers can be continuously tuned.


原文链接

http://onlinelibrary.wiley.com/doi/10.1002/adma.201470114/abstract

2017年02月08日

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